 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BSB012N03LX3 G OptiMOSTM3 Power-MOSFET Features * Optimized for high switching frequency DC/DC converter * Very low on-resistance R DS(on) * Excellent gate charge x R DS(on) product (FOM) * Low parasitic inductance * Low profile (<0.7 mm) * 100% avalanche tested * 100% Rg Tested * Double-sided cooling * Pb-free plating; RoHS compliant Product Summary V DS R DS(on),max ID 30 1.2 180 MG-WDSON-2 V m A * Compatible with DirectFET(R) package MX footprint and outline 1) * Qualified according to JEDEC2) for target applications Type BSB012N03LX3 G Package MG-WDSON-2 Outline MX Marking 0103 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 C V GS=10 V, T C=100 C V GS=10 V, T A=25 C, R thJA=45 K/W Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage I D,pulse I AS E AS V GS T C=25 C T C=25 C I D=40 A, R GS=25 Value 180 139 Unit A 39 400 40 290 20 mJ V 1) CanPAKTM uses DirectFET (R) technology licensed from International Rectifier Corporation. DirectFET(R) is a registered trademark of International Rectifier Corporation. 2) 3) 4) J-STD20 and JESD22 See figure 3 for more detailed information See figure 13 for more detailed information Rev. 2.1 page 1 2009-11-17 BSB012N03LX3 G Maximum ratings, at T j=25 C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 C T A=25 C, R thJA=45 K/W Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 89 2.8 -40....150 55/150/56 C Unit W Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case R thJC bottom top Device on PCB R thJA 6 cm2 cooling area5) 1.0 1.4 45 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 A V DS=30 V, V GS=0 V, T j=25 C V DS=30 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=25 A V GS=10 V, I D=30 A Gate resistance Transconductance 5) 30 1 - 0.1 2.2 10 V A 0.2 10 10 1.4 1.0 0.5 140 100 100 1.8 1.2 1.0 S nA m RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 70 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.1 page 2 2009-11-17 BSB012N03LX3 G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 6) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Q gs Q g(th) Q gd Q sw Qg V plateau Qg V DD=15 V, I D=30 A, V GS=0 to 10 V V DS=0.1 V, V GS=0 to 4.5 V V DD=15 V, V GS=0 V V DD=15 V, I D=30 A, V GS=0 to 4.5 V 26 16 13 24 61 2.7 127 81 169 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 V GS=0 V, V DS=15 V, f =1 MHz 12700 3300 200 7.9 8.6 47 8.4 16900 pF 4400 ns Values typ. max. Unit Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Q g(sync) Q oss - 53 85 - nC IS I S,pulse V SD T C=25 C V GS=0 V, I F=30 A, T j=25 C V R=15 V, I F=I S, di F/dt =400 A/s - 0.77 89 400 - A V Reverse recovery charge 6) Q rr - - 50 nC See figure 16 for gate charge parameter definition Rev. 2.1 page 3 2009-11-17 BSB012N03LX3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 100 90 80 70 60 200 160 120 P tot [W] 50 40 30 20 10 0 0 40 80 120 160 I D [A] 80 40 0 0 40 80 120 160 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 limited by on-state resistance 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 1 s 10 s 102 100 s 100 0.5 Z thJC [K/W] DC 1 ms 0.2 I D [A] 101 10 ms 10-1 0.1 0.05 0.02 100 10-2 0.01 single pulse 10-1 10 -1 10-3 10 0 10 1 10 2 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 2.1 page 4 2009-11-17 BSB012N03LX3 G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 800 720 640 3 560 480 10 V 4V 3.2 V 5V 4.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 4 R DS(on) [m] I D [A] 400 320 3.5 V 2 3.5 V 4V 4.5 V 5V 240 1 160 80 0 0 1 2 3 3.2 V 3V 2.8 V 10 V 7V 0 0 10 20 30 40 50 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 400 8 Typ. forward transconductance g fs=f(I D); T j=25 C 400 360 320 320 280 240 240 g fs [S] 160 80 150 C 25 C I D [A] 200 160 120 80 40 0 0 0 1 2 3 4 5 0 40 80 120 160 V GS [V] I D [A] Rev. 2.1 page 5 2009-11-17 BSB012N03LX3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=250 A 2 1.8 1.6 1.4 98 % 2.5 2 R DS(on) [m] 1.2 1 0.8 0.6 0.4 0.2 0 -60 -20 20 60 100 140 180 typ V GS(th) [V] 1.5 1 0.5 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 105 1000 25 C 150 C, 98% 104 Ciss Coss 100 150 C 25 C, 98% C [pF] 10 3 Crss I F [A] 10 1 0 10 20 30 0.0 102 101 0.5 1.0 1.5 2.0 V DS [V] V SD [V] Rev. 2.1 page 6 2009-11-17 BSB012N03LX3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=30 A pulsed parameter: V DD 12 15 V 10 6V 25 C 125 C 100 C 24 V 8 10 V GS [V] 1 10 100 1000 I AV [A] 6 4 2 1 0 0 50 100 150 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 34 V GS 32 Qg 30 V BR(DSS) [V] 28 26 V g s(th) 24 22 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 20 T j [C] Rev. 2.1 page 7 2009-11-17 BSB012N03LX3 G Package Outline Rev. 2.1 page 8 2009-11-17 BSB012N03LX3 G Package Outline PG-TDSON-8: Tape MG-WDSON-2 Dimensions in mm Rev. 2.1 page 9 2009-11-17 BSB012N03LX3 G Dimensions in mm Recommended stencil thickness 150 m Rev. 2.1 page 10 2009-11-17 BSB012N03LX3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 11 2009-11-17 |
Price & Availability of BSB012N03LX3G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |